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DATA SHEET
MOS Field Effect Power Transistors
PA1710
SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers.
8
PACKAGE DIMENSIONS
(in millimeter)
5 1,2,3 ; Source 4 ; Gate 5,6,7,8 ; Drain
FEATURES
* Low On-Resistance RDS(on)1 = 70 m Max.(VGS = -10V, ID = -2.5A) RDS(on)2 = 0.16 Max.(VGS = -4V, ID = -2.0A)
1.44
* Low Ciss Ciss = 980pF Typ.
1.8Max
1 5.37 Max
4
6.00.3 4.4 0.8
* Small and Surface Mount Package (Power SOP8)
0.15 -0.05
+0.10
* Built-in G-S Protection Diode
0.05 Min
0.50.2 1.27 0.78Max 0.12 M 0.10
+0.10 0.40 -0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25 C, All terminals are connected)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Channel Temperature Storage Temperature * PW10 s, Duty Cycle 1% ** Mounted on ceramic substrate of 1200 mm2 x 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. VDSS VGSS ID(DC) ID(pulse) Tch Tstg -30
- + 20 - + 5.0 - + 20
V V A A W C C
Gate
Drain
Body Diode
Total Power Dissipation (TA = 25C)** PT
2.0 150 -50 to +150
Gate Protection Diode Source
The information in this document is subject to change without notice. Document No. G10888EJ2V0DS00 (2nd edition) Date Published April 1996 P Printed in Japan
(c)
1995
PA1710
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -10V, ID = -2.5A VGS = -4V, ID = -2.0A VDS = -10V, ID = -1mA VDS = -10V, ID = -2.5A VDS = -30V, VGS = 0 - VGS = + 20V, VDS = 0 VDS = -10V VGS=0 f = 1MHz ID = -2.5A VGS(on) = -10V VDD = -15V RG = 10 ID = -5.0A VDD = -24V VGS = -10V IF = 5.0A, VGS = 0 IF = 5.0A, VGS = 0 di/dt = 50A/s 980 780 430 25 80 100 100 38 3.6 17 0.8 85 200 -1.0 3.0 MIN. TYP. 50 110 -1.5 5.0 -10 - + 10 MAX. 70 160 -2.5 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
Test Circuit 1 Switching Time
D.U.T. RL
RG
Test Circuit 2 Gate Charge
VGS VGS
Wave Form
PG.
10 % 0 ID
VGS (on)
90 %
D.U.T. IG = 2 mA RL
RG = 10
VDD 90 % 90 % ID ID
Wave Form
VGS 0 t t = 1 s Duty Cycle < 1 % =
0
10 % td (on) ton tr td (off) toff
10 % tf
PG.
50
VDD
2
PA1710
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80
Mounted on ceramic substrate of 1 200 mm 2 x 0.7 mm
0
20
40
60
80
100 120 140 160
100 120 140 160
Ta - Ambient Temperature - C
Ta - Ambient Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = -10 V Pulsed
FORWARD BIAS SAFE OPERATING AREA -100
d ite V) Lim-10 = S
Mounted on ceramic substrate of 1 200 mm 2x 0.7 mm
-20
ID(pulse)
-10
RD t VG (a
S(
) on
=
1
ID(DC)
10 10 0
m
s
m
s
ID - Drain Current - A
ID - Drain Current - A
PW
VGS = -4.5 V -10 VGS = -4 V
Po
-1
we
rD
m
iss DC ipa tio n
s
-0.1 -0.1
TA = 25 C Single Pulse
Lim
ite
d
-100 0 -1 -2 -3 -4
-1
-10
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS -100
VDS = -10 V
Pulsed
ID - Drain Current - A
-10
-1
TA = 125 C 25 C -25 C
-0.1
0
-2.0
-4.0
-6.0
-8.0
VGS - Gate to Source Voltage - V
3
PA1710
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W
Rth(ch-a) = 62.5 C/W
100
10
1
0.1
0.01 0.001 10
Mounted on ceramic substrate of 1 200 mm 2 x 0.7 mm Single Pulse
100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.3 Pulsed
ID = -2.5 A
100 TA = -25 C 25 C 75 C 125 C
VDS = -10 V Pulsed
10
RDS(on) - Drain to Source On-State Resistance -
| yfs | - Forward Transfer Admittance - S
0.2
1
0.1
0.1 -0.1
-1
-10
-100
0
-5
-10
-15
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-State Resistance -
VGS(off) - Gate to Source Cutoff Voltage - V
0.3
VGS = -4 V
Pulsed
-2.0
VDS = -10 V ID = -1 mA
0.2 VGS = -4.5 V
-1.5
0.1 VGS = -10 V 0
-1.1 - 50
-1
-10 ID - Drain Current - A
-100
0
50
100
150
Tch - Channel Temperature - C
4
PA1710
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A 180 VGS = -4.0 V ID = -2.0 A -100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
140
-10
VGS = -4 V
100 VGS = -4.5 V ID = -2.0 A 60 VGS = -10 V ID = -2.5 A - 50 0 50 100 Pulsed 150
-1 VGS = 0 -0.1 0 -0.5 -1.0 -1.5
20
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns VGS = 0 f = 1 MHz 1 000
SWITCHING CHARACTERISTICS tr tf 100 td(off) tf td(off) td(on)
1 000
Ciss Coss Crss
100
10
10 -0.1
-1
-10
-100
1 -0.1
-1
VDD = -15 V VGS(on) = -10 V RG = 10 -10 -100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V di/dt = 50 A/ s VGS = 0
-30 VDS -20 VDD = -24V -15V -8V
VGS
-12 -10 -8 -6
100
10
-10
-4 -2
1 0.1
1
10
100
0
ISD - Diode Current - A
10 20 30 Qg - Gate Charge - nC
0 40
5
VGS - Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS -40 -16 ID = -5.0 A -14
PA1710
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037
6
PA1710
[MEMO]
7
PA1710
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
2

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